Improvement of kink-free output power by using highly resistive regions in both sides of the ridge stripe for 980-nm laser diodes

• Published in: IEEE journal of quantum electronics Vol. 40; no. 9; pp. 1203 - 1207
• Main Authors: Yuda, M., Hirono, T., Kozen, A., Amano, C.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.09.2004; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Carriers; Diode lasers; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Gain; Hydrogen; Laser diodes; Lasers; Methane; Optical fiber communication; Optical pumping; Optical refraction; Optical variables control; Optical waveguides; Optics; Passivation; Physics; Power generation; Quantum electronics; Retarding; Ridges; Semiconductor lasers; laser diodes; Simulation; Stimulated emission; Aluminium Gallium Arsenides; Gallium arsenides; Output power; Ternary compounds; Quantum wells; Theoretical study; Doped materials; Binary compounds; Experimental study; Laser diodes; Optical waveguides; Optical fiber amplifiers; CV characteristic; Ridge waveguides; Manufacturing processes; Semiconductor lasers; Sheet resistivity; MOVPE method; Quantum well lasers; Erbium additions
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/JQE.2004.833218

Suppressing the lateral expansion of driving current by forming highly resistive regions at both sides of the ridge stripe in ridge-waveguide-type 980-nm laser diodes leads to an enhanced kink-free output power. The highly resistive regions are formed by hydrogen passivation of p-type carrier (Zn) on the plasma exposure in a mixture gas of methane and hydrogen. A simulation predicted a decrease in local gain in the lateral direction at both sides of the ridge stripe. Fabricated laser diodes with the highly resistive regions exhibit kink-free output power of over 500 mW, showing an increase in kink-free power of 85 mW on average with an increase of slope efficiency of about 10% compared to those without highly resistive regions.