N-channel thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride with ultrathin polymer gate buffer layer

• Published in: Thin solid films Vol. 518; no. 2; pp. 571 - 574
• Main Authors: Tanida, Shinji, Noda, Kei, Kawabata, Hiroshi, Matsushige, Kazumi
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 30.11.2009; Elsevier
• Subjects: Air stability; Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electron traps; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics; Exact sciences and technology; Gate buffer layer; n-channel operation; Organic thin-film transistor; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Solid surfaces and solid-solid interfaces; Surface and interface electron states; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Transistors; Electron traps; Gate buffer layer; Air stability; n-channel operation; Organic thin-film transistor; Buffer layer; Methyl methacrylate polymer; n channel; Polymer; Organic anhydride; X ray reflection; Adsorption; Silicon oxides; Electron mobility; Organic semiconductors; Thin film transistor; Gates
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2009.07.019

N-channel operation of thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) with a 9-nm-thick poly(methyl methacrylate) (PMMA) gate buffer layer was examined. The uniform coverage of the ultrathin PMMA layer on an SiO 2 gate insulator, verified by X-ray reflectivity measurement, caused the increase of electron field-effect mobility because of the suppression of electron traps existing on the SiO 2 surface. In addition, air stability for n-channel operation of the NTCDA transistor was also improved by the PMMA layer which possibly prevented the adsorption of ambient water molecules onto the SiO 2 surface.