Low-Temperature Combustion-Synthesized Nickel Oxide Thin Films as Hole-Transport Interlayers for Solution-Processed Optoelectronic Devices

A method to deposit NiOx thin films by employing combustion reactions is reported and a low processing temperature of 175 °C is demonstrated. The resulting NiOx films exhibit high work functions, excellent optical transparency, and flat surface features. The NiOx thin films are employed as hole‐tran...

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Published inAdvanced energy materials Vol. 4; no. 6; pp. np - n/a
Main Authors Bai, Sai, Cao, Motao, Jin, Yizheng, Dai, Xinliang, Liang, Xiaoyong, Ye, Zhizhen, Li, Min, Cheng, Jipeng, Xiao, Xuezhang, Wu, Zhongwei, Xia, Zhouhui, Sun, Baoquan, Wang, Ergang, Mo, Yueqi, Gao, Feng, Zhang, Fengling
Format Journal Article
LanguageEnglish
Published Weinheim Blackwell Publishing Ltd 01.04.2014
Wiley Subscription Services, Inc
Subjects
Combustion
Electrical properties
Hole transport layers
Interlayers
Nickel oxides
NiOx films
Optoelectronic devices
Optoelectronics
Solution-processed materials
Thin films
Transport
Work functions
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Summary:A method to deposit NiOx thin films by employing combustion reactions is reported and a low processing temperature of 175 °C is demonstrated. The resulting NiOx films exhibit high work functions, excellent optical transparency, and flat surface features. The NiOx thin films are employed as hole‐transport interlayers in organic solar cells and polymer light‐emitting diodes, exhibiting superior electrical properties.
Bibliography:istex:F912B96A5708C954F8687C55065454E2C7F2BE72
ark:/67375/WNG-4NCB635C-S
ArticleID:AENM201301460
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ISSN:1614-6832
1614-6840
1614-6840
DOI:10.1002/aenm.201301460