Identification of the 0.95 eV luminescence band in n-type GaAs:Si

The luminescence band at 0.95 eV has been identified as originating from the transition within (SiGaVGaSiGa) complexes by comparing cathodoluminescence and positron annihilation spectra. The upper and lower energy levels of the molecule-like defect complexes are suggested to lie at 22 meV below the...

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Published inJournal of physics. Condensed matter Vol. 16; no. 2; pp. S279 - S285
Main Authors Lei, H, Leipner, H S, Bondarenko, V, Schreiber, J
Format Journal Article Conference Proceeding
LanguageEnglish
Published Bristol IOP Publishing 21.01.2004
Institute of Physics
Subjects
Cathodoluminescence, ionoluminescence
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Iii-v semiconductors
Impurity and defect levels
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other luminescence and radiative recombination
Physics
Defect states
Integrated intensity
Complex defect
Gallium arsenides
Inorganic compounds
Semiconductor materials
Doping
Binary compounds
Positron annihilation
Cathodoluminescence
Experimental study
Silicon additions
Momentum distribution
Charge carrier trapping
Valence
Impurities
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Summary:The luminescence band at 0.95 eV has been identified as originating from the transition within (SiGaVGaSiGa) complexes by comparing cathodoluminescence and positron annihilation spectra. The upper and lower energy levels of the molecule-like defect complexes are suggested to lie at 22 meV below the conduction band and at about 0.5 eV above the valence band, respectively.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/16/2/033