Epitaxial pore-free gadolinia-doped ceria thin films on yttria-stabilized zirconia by RF magnetron sputtering

A thin film of gadolinia-doped ceria (GDC) grown on (001) single crystal of yttria-stabilized zirconia (YSZ) was produced by RF magnetron sputtering using a stoichiometric target. Films deposited at room temperature showed columnar porosity which changed to equiaxed on annealing at 1150°C. It is sho...

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Published inCeramics international Vol. 39; no. 8; pp. 9749 - 9752
Main Authors Ansari, Haris M., Rauscher, Michael D., Dregia, Suliman A., Akbar, Sheikh A.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.12.2013
Subjects
A. Films
Annealing
B. Interfaces
Cerium oxide
Deposition
Epitaxy
Gadolinia-doped CeO2
Radio frequencies
Thin films
Yttria stabilized zirconia
Yttria-stabilized zirconia (YSZ)
Zirconium dioxide
A. Films
B. Interfaces
Gadolinia-doped CeO2
Yttria-stabilized zirconia (YSZ)
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Summary:A thin film of gadolinia-doped ceria (GDC) grown on (001) single crystal of yttria-stabilized zirconia (YSZ) was produced by RF magnetron sputtering using a stoichiometric target. Films deposited at room temperature showed columnar porosity which changed to equiaxed on annealing at 1150°C. It is shown that films deposited at 500°C were epitaxial, uniform in thickness, pore-free and remained dense after annealing at 1150°C. This method can be used to attain reproducible control over important characteristics of the film such as structure, composition, orientation, thickness and morphology.
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ISSN:0272-8842
1873-3956
DOI:10.1016/j.ceramint.2013.05.014