Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu–Ni alloys
A modified chemical vapour deposition set-up allowing extremely localized injection of carbon precursors on a Cu–Ni substrate is used for the fast growth of large-area single-crystalline monolayers of graphene. Wafer-scale single-crystalline graphene monolayers are highly sought after as an ideal pl...
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Published in | Nature materials Vol. 15; no. 1; pp. 43 - 47 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
London
Nature Publishing Group UK
01.01.2016
Nature Publishing Group |
Subjects | |
Online Access | Get full text |
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Summary: | A modified chemical vapour deposition set-up allowing extremely localized injection of carbon precursors on a Cu–Ni substrate is used for the fast growth of large-area single-crystalline monolayers of graphene.
Wafer-scale single-crystalline graphene monolayers are highly sought after as an ideal platform for electronic and other applications
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. At present, state-of-the-art growth methods based on chemical vapour deposition allow the synthesis of one-centimetre-sized single-crystalline graphene domains in ∼12 h, by suppressing nucleation events on the growth substrate
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. Here we demonstrate an efficient strategy for achieving large-area single-crystalline graphene by letting a single nucleus evolve into a monolayer at a fast rate. By locally feeding carbon precursors to a desired position of a substrate composed of an optimized Cu–Ni alloy, we synthesized an ∼1.5-inch-large graphene monolayer in 2.5 h. Localized feeding induces the formation of a single nucleus on the entire substrate, and the optimized alloy activates an isothermal segregation mechanism that greatly expedites the growth rate
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. This approach may also prove effective for the synthesis of wafer-scale single-crystalline monolayers of other two-dimensional materials. |
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Bibliography: | SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 14 ObjectType-Article-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1476-1122 1476-4660 1476-4660 |
DOI: | 10.1038/nmat4477 |