Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu–Ni alloys

A modified chemical vapour deposition set-up allowing extremely localized injection of carbon precursors on a Cu–Ni substrate is used for the fast growth of large-area single-crystalline monolayers of graphene. Wafer-scale single-crystalline graphene monolayers are highly sought after as an ideal pl...

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Published inNature materials Vol. 15; no. 1; pp. 43 - 47
Main Authors Wu, Tianru, Zhang, Xuefu, Yuan, Qinghong, Xue, Jiachen, Lu, Guangyuan, Liu, Zhihong, Wang, Huishan, Wang, Haomin, Ding, Feng, Yu, Qingkai, Xie, Xiaoming, Jiang, Mianheng
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 01.01.2016
Nature Publishing Group
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Summary:A modified chemical vapour deposition set-up allowing extremely localized injection of carbon precursors on a Cu–Ni substrate is used for the fast growth of large-area single-crystalline monolayers of graphene. Wafer-scale single-crystalline graphene monolayers are highly sought after as an ideal platform for electronic and other applications 1 , 2 , 3 . At present, state-of-the-art growth methods based on chemical vapour deposition allow the synthesis of one-centimetre-sized single-crystalline graphene domains in ∼12 h, by suppressing nucleation events on the growth substrate 4 . Here we demonstrate an efficient strategy for achieving large-area single-crystalline graphene by letting a single nucleus evolve into a monolayer at a fast rate. By locally feeding carbon precursors to a desired position of a substrate composed of an optimized Cu–Ni alloy, we synthesized an ∼1.5-inch-large graphene monolayer in 2.5 h. Localized feeding induces the formation of a single nucleus on the entire substrate, and the optimized alloy activates an isothermal segregation mechanism that greatly expedites the growth rate 5 , 6 . This approach may also prove effective for the synthesis of wafer-scale single-crystalline monolayers of other two-dimensional materials.
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ISSN:1476-1122
1476-4660
1476-4660
DOI:10.1038/nmat4477