Effects of polysilane‐doped spiro‐OMeTAD hole transport layers on photovoltaic properties

• Published in: Physica status solidi. A, Applications and materials science Vol. 214; no. 3; pp. np - n/a
• Main Authors: Shirahata, Yasuhiro, Yamomoto, Yuki, Suzuki, Atsushi, Oku, Takeo, Fukunishi, Sakiko, Kohno, Kazufumi
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 01.03.2017
• Subjects: CH3NH3PbI3; Conversion; Devices; Efficiency; Energy conversion efficiency; hole transport layers; Impact analysis; Microstructure; perovskites; Photovoltaic cells; photovoltaics; polysilane; Polysilanes; Properties (attributes); Solar cells; Transport
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201600591

Effects of polysilane‐doped 2,2′,7,7′‐tetrakis‐(N,N‐di‐p‐methoxyphenylamino)‐9,9′‐spirobifluorene (spiro‐OMeTAD) hole transport layers on photovoltaic properties were investigated by measuring current density–voltage characteristics and incident photon‐to‐current conversion efficiency of CH3NH3PbI3‐based photovoltaic devices. Three kinds of polysilanes were used as the dopants. Due to the polysilane doping, conversion efficiencies of the CH3NH3PbI3 devices using the polysilane‐doped hole transport layers were improved. Microstructures of the CH3NH3PbI3 devices were also investigated. Based on the results of the microstructure analysis, impact of silicon in the polysilanes doped into spiro‐OMeTAD layer on photovoltaic properties were discussed.