Effect of shallow and deep donors on the equilibrium electron density of the two-dimensional electron gas in a modulation-doped field-effect transistor

A model to calculate the equilibrium electron density of the two-dimensional electron gas in a modulation-doped field-effect transistor that takes into account the simultaneous presence of both shallow and deep donors in the Si-doped AlGaAs is presented. The results of our calculation are compared w...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 33; no. 5; pp. 707 - 711
Main Authors Subramanian, S., Vengurlekar, A.S., Diwan, A.A.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.05.1986
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Field effect transistor
High electron mobility transistor
Electron density
Electron gas
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Summary:A model to calculate the equilibrium electron density of the two-dimensional electron gas in a modulation-doped field-effect transistor that takes into account the simultaneous presence of both shallow and deep donors in the Si-doped AlGaAs is presented. The results of our calculation are compared with earlier theoretical and experimental results.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1986.22555