Accessing new magnetic regimes by tuning the ligand spin-orbit coupling in van der Waals magnets
Van der Waals (VdW) materials have opened new directions in the study of low dimensional magnetism. A largely unexplored arena is the intrinsic tuning of VdW magnets toward new ground states. Chromium trihalides provided the first such example with a change of interlayer magnetic coupling emerging u...
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Published in | Science advances Vol. 6; no. 30; p. eabb9379 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
American Association for the Advancement of Science (AAAS)
24.07.2020
American Association for the Advancement of Science |
Subjects | |
Online Access | Get full text |
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Summary: | Van der Waals (VdW) materials have opened new directions in the study of low dimensional magnetism. A largely unexplored arena is the intrinsic tuning of VdW magnets toward new ground states. Chromium trihalides provided the first such example with a change of interlayer magnetic coupling emerging upon exfoliation. Here, we take a different approach to engineer previously unknown ground states, not by exfoliation, but by tuning the spin-orbit coupling (SOC) of the nonmagnetic ligand atoms (Cl, Br, I). We synthesize a three-halide series, CrCl
Br
I
, and map their magnetic properties as a function of Cl, Br, and I content. The resulting triangular phase diagrams unveil a frustrated regime near CrCl
. First-principles calculations confirm that the frustration is driven by a competition between the chromium and halide SOCs. Furthermore, we reveal a field-induced change of interlayer coupling in the bulk of CrCl
Br
I
crystals at the same field as in the exfoliation experiments. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 SC0018675; DMR-1708929; DMR-1700030; DMR-1712128 USDOE National Science Foundation (NSF) USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division |
ISSN: | 2375-2548 2375-2548 |
DOI: | 10.1126/sciadv.abb9379 |