Highly reliable silicon nitride thin films made by jet vapor deposition

• Published in: Japanese Journal of Applied Physics Vol. 34; no. 2B; pp. 955 - 958
• Main Authors: WIE-WEN WANG, TSO-PING MA, GUANG-JI CUI, TAMAGAWA, T, GOLZ, J. W, KARECHI, S, HALPERN, B. H, SCHMITT, J. J
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.02.1995
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Ion and electron beam-assisted deposition; ion plating; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Crystal growth; Capacitors; Supersonic jet; MNS-System; Hot carriers; Time voltage characteristic; Thin films; Microelectronic fabrication; Traps; Emission spectra; JVD method; IV characteristic; Production process; Function block diagram; Electrical properties; Deposition rate; Experimental study; Interfaces; Growth from vapor; Manufacturing process; Gas jet; Silicon nitrides; Leakage current; Reliability; Radiation damage
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.34.955

This paper reports our results on the properties of gate-quality silicon nitride thin films produced by the jet vapor deposition (JVD) technique at room temperature. It will be shown that the electrical properties and reliability of the metal-nitride-silicon (MNS) capacitors, in terms of their densities of interface traps, leakage current, and resistance against hot-carrier or radiation damage, are significantly better than similar devices made by any other deposited nitrides previously reported.