A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation

As the semiconductor devices of integrated circuits approach the physical limitations of scaling, alternative transistor and memory designs are needed to achieve improvements in speed, density, and power consumption. We report on a transistor that uses an embedded tunneling field-effect transistor f...

Full description

Saved in:
Bibliographic Details
Published inScience (American Association for the Advancement of Science) Vol. 341; no. 6146; pp. 640 - 643
Main Authors Wang, Peng-Fei, Lin, Xi, Liu, Lei, Sun, Qing-Qing, Zhou, Peng, Liu, Xiao-Yong, Liu, Wei, Gong, Yi, Zhang, David Wei
Format Journal Article
LanguageEnglish
Published Washington, DC American Association for the Advancement of Science 09.08.2013
The American Association for the Advancement of Science
Subjects
Applied sciences
Detection
Drains
Electric current
Electric potential
Electrical engineering
Electronics
Electrons
Exact sciences and technology
Field effect transistors
Gates
Integrated circuits
Luminous intensity
Metal oxide semiconductors
MOSFETs
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Sensors
Threshold voltage
Transistors
Volatile organic compounds
Writing
Voltage threshold
Energy consumption
High performance
Density measurement
Gate voltage
Tunnel effect
Transistor gate
Discharge charge cycle
Floating gate technology
Field effect transistor
Low voltage
Semiconductor device
Integrated circuit
Size effect
High speed
Drain current
Online AccessGet full text

Cover

More Information
Summary:As the semiconductor devices of integrated circuits approach the physical limitations of scaling, alternative transistor and memory designs are needed to achieve improvements in speed, density, and power consumption. We report on a transistor that uses an embedded tunneling field-effect transistor for charging and discharging the semi-floating gate. This transistor operates at low voltages (≤2.0 volts), with a large threshold voltage window of 3.1 volts, and can achieve ultra—high-speed writing operations (on time scales of ∼1 nanosecond). A linear dependence of drain current on light intensity was observed when the transistor was exposed to light, so possible applications include image sensing with high density and performance.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0036-8075
1095-9203
DOI:10.1126/science.1240961