A highly oriented conductive MOF thin film-based Schottky diode for self-powered light and gas detection

The application of Schottky junction in self-powered devices is limited by low efficiency in both separation and transport of photogenerated electrons/holes. This issue may be overcome by introducing electronically conductive metal-organic framework (EC-MOF) materials into the junction and limited b...

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Published inJournal of materials chemistry. A, Materials for energy and sustainability Vol. 8; no. 18; pp. 985 - 99
Main Authors Cao, Lin-An, Yao, Ming-Shui, Jiang, Hui-Jie, Kitagawa, Susumu, Ye, Xiao-Liang, Li, Wen-Hua, Xu, Gang
Format Journal Article
LanguageEnglish
Published Cambridge Royal Society of Chemistry 12.05.2020
Subjects
coordination polymers
diodes
electrons
films (materials)
Gas sensors
Gases
Interlayers
Metal-organic frameworks
Photometers
Quantum efficiency
Schottky diodes
Thin films
Vapors
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Abstract The application of Schottky junction in self-powered devices is limited by low efficiency in both separation and transport of photogenerated electrons/holes. This issue may be overcome by introducing electronically conductive metal-organic framework (EC-MOF) materials into the junction and limited by preparing high-quality thin films of EC-MOFs. In this study, for the first time, high-quality EC-MOF thin films were demonstrated as effective interlayer materials to solve the above-mentioned issue by modulating the height of Schottky barrier ( Φ B ). The EC-MOF-based self-powered Schottky diode can act as a photodetector and demonstrate the highest external quantum efficiency (84%) for all reported self-powered photodetectors as well as the broadest detectable spectrum range (250 to 1500 nm), high on-off ratio (∼10 3 ) and short rise (0.007 s) and fall time (0.03 s). Furthermore, it can be used as a gas sensor for typical harmful gases and vapors. High-quality EC-MOF thin films are used to modulate the Schottky barrier height and detect light/gas by self-powered mode.
AbstractList The application of Schottky junction in self-powered devices is limited by low efficiency in both separation and transport of photogenerated electrons/holes. This issue may be overcome by introducing electronically conductive metal–organic framework (EC-MOF) materials into the junction and limited by preparing high-quality thin films of EC-MOFs. In this study, for the first time, high-quality EC-MOF thin films were demonstrated as effective interlayer materials to solve the above-mentioned issue by modulating the height of Schottky barrier (ΦB). The EC-MOF-based self-powered Schottky diode can act as a photodetector and demonstrate the highest external quantum efficiency (84%) for all reported self-powered photodetectors as well as the broadest detectable spectrum range (250 to 1500 nm), high on–off ratio (∼10³) and short rise (0.007 s) and fall time (0.03 s). Furthermore, it can be used as a gas sensor for typical harmful gases and vapors.
The application of Schottky junction in self-powered devices is limited by low efficiency in both separation and transport of photogenerated electrons/holes. This issue may be overcome by introducing electronically conductive metal–organic framework (EC-MOF) materials into the junction and limited by preparing high-quality thin films of EC-MOFs. In this study, for the first time, high-quality EC-MOF thin films were demonstrated as effective interlayer materials to solve the above-mentioned issue by modulating the height of Schottky barrier (ΦB). The EC-MOF-based self-powered Schottky diode can act as a photodetector and demonstrate the highest external quantum efficiency (84%) for all reported self-powered photodetectors as well as the broadest detectable spectrum range (250 to 1500 nm), high on–off ratio (∼103) and short rise (0.007 s) and fall time (0.03 s). Furthermore, it can be used as a gas sensor for typical harmful gases and vapors.
The application of Schottky junction in self-powered devices is limited by low efficiency in both separation and transport of photogenerated electrons/holes. This issue may be overcome by introducing electronically conductive metal–organic framework (EC-MOF) materials into the junction and limited by preparing high-quality thin films of EC-MOFs. In this study, for the first time, high-quality EC-MOF thin films were demonstrated as effective interlayer materials to solve the above-mentioned issue by modulating the height of Schottky barrier ( Φ B ). The EC-MOF-based self-powered Schottky diode can act as a photodetector and demonstrate the highest external quantum efficiency (84%) for all reported self-powered photodetectors as well as the broadest detectable spectrum range (250 to 1500 nm), high on–off ratio (∼10 3 ) and short rise (0.007 s) and fall time (0.03 s). Furthermore, it can be used as a gas sensor for typical harmful gases and vapors.
The application of Schottky junction in self-powered devices is limited by low efficiency in both separation and transport of photogenerated electrons/holes. This issue may be overcome by introducing electronically conductive metal-organic framework (EC-MOF) materials into the junction and limited by preparing high-quality thin films of EC-MOFs. In this study, for the first time, high-quality EC-MOF thin films were demonstrated as effective interlayer materials to solve the above-mentioned issue by modulating the height of Schottky barrier ( Φ B ). The EC-MOF-based self-powered Schottky diode can act as a photodetector and demonstrate the highest external quantum efficiency (84%) for all reported self-powered photodetectors as well as the broadest detectable spectrum range (250 to 1500 nm), high on-off ratio (∼10 3 ) and short rise (0.007 s) and fall time (0.03 s). Furthermore, it can be used as a gas sensor for typical harmful gases and vapors. High-quality EC-MOF thin films are used to modulate the Schottky barrier height and detect light/gas by self-powered mode.
Author Yao, Ming-Shui
Ye, Xiao-Liang
Kitagawa, Susumu
Cao, Lin-An
Jiang, Hui-Jie
Li, Wen-Hua
Xu, Gang
AuthorAffiliation State Key Laboratory of Structural Chemistry
Kyoto University
Chinese Academy of Sciences (CAS)
Institute for Integrated Cell-Material Sciences (WPI-iCeMS)
University of Chinese Academy of Sciences (UCAS)
Kyoto University Institute for Advanced Study
Fujian Institute of Research on the Structure of Matter
AuthorAffiliation_xml – name: Kyoto University
– name: Kyoto University Institute for Advanced Study
– name: State Key Laboratory of Structural Chemistry
– name: University of Chinese Academy of Sciences (UCAS)
– name: Chinese Academy of Sciences (CAS)
– name: Institute for Integrated Cell-Material Sciences (WPI-iCeMS)
– name: Fujian Institute of Research on the Structure of Matter
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Snippet The application of Schottky junction in self-powered devices is limited by low efficiency in both separation and transport of photogenerated electrons/holes....
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SubjectTerms coordination polymers
diodes
electrons
films (materials)
Gas sensors
Gases
Interlayers
Metal-organic frameworks
Photometers
Quantum efficiency
Schottky diodes
Thin films
Vapors
Title A highly oriented conductive MOF thin film-based Schottky diode for self-powered light and gas detection
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https://www.proquest.com/docview/2477624948
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