A highly oriented conductive MOF thin film-based Schottky diode for self-powered light and gas detection

• Published in: Journal of materials chemistry. A, Materials for energy and sustainability Vol. 8; no. 18; pp. 985 - 99
• Main Authors: Cao, Lin-An, Yao, Ming-Shui, Jiang, Hui-Jie, Kitagawa, Susumu, Ye, Xiao-Liang, Li, Wen-Hua, Xu, Gang
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 12.05.2020
• Subjects: coordination polymers; diodes; electrons; films (materials); Gas sensors; Gases; Interlayers; Metal-organic frameworks; Photometers; Quantum efficiency; Schottky diodes; Thin films; Vapors
• ISSN: 2050-7488; 2050-7496; 2050-7496
• DOI: 10.1039/d0ta01379j

The application of Schottky junction in self-powered devices is limited by low efficiency in both separation and transport of photogenerated electrons/holes. This issue may be overcome by introducing electronically conductive metal-organic framework (EC-MOF) materials into the junction and limited by preparing high-quality thin films of EC-MOFs. In this study, for the first time, high-quality EC-MOF thin films were demonstrated as effective interlayer materials to solve the above-mentioned issue by modulating the height of Schottky barrier ( Φ B ). The EC-MOF-based self-powered Schottky diode can act as a photodetector and demonstrate the highest external quantum efficiency (84%) for all reported self-powered photodetectors as well as the broadest detectable spectrum range (250 to 1500 nm), high on-off ratio (∼10 3 ) and short rise (0.007 s) and fall time (0.03 s). Furthermore, it can be used as a gas sensor for typical harmful gases and vapors. High-quality EC-MOF thin films are used to modulate the Schottky barrier height and detect light/gas by self-powered mode.