Fabrication and Properties of Silicon-Based PLZT Thin Films for MFSFET Applications

• Published in: Integrated ferroelectrics Vol. 61; no. 1; pp. 189 - 195
• Main Authors: SHAO, TIAN-QI, REN, TIAN-LING, LIU, LI-TIAN, ZHU, JUN, LI, ZHI-JIAN
• Format: Journal Article
• Language: English
• Published: Taylor & Francis Group 01.08.2004
• Subjects: FET; Metal-ferroelectric-semiconductor (MFS) structures; PLZT; sol-gel
• ISSN: 1058-4587; 1607-8489
• DOI: 10.1080/10584580490459233

Fabrication and properties of lanthanum-modified lead zirconate titanate (PLZT) thin films have been studied for Metal-Ferroelectric-Semiconductor FET (MFSFET) devices. PLZT based MFS capacitors using lead titanate (PT) as seeding layers have been respectively prepared on p-type ⟨111⟩ and n-type ⟨100⟩ silicon wafers directly by a sol-gel method. PLZT films are final annealed at 650°C for 1 min in oxygen ambient using rapid thermal annealing (RTA). The measured memory windows of the MFS capacitors based on p-type silicon wafer are about 2.0 V and 4.2 V under the polarization voltages of ±5 V and ±10 V, and the measured memory windows of the MFS capacitors based on n-type Silicon wafer are about 0.3 V and 1.5 V under the polarization voltages of ±5 V and ±10 V correspondingly. The MFS structures based on p-type silicon wafer can be valuable for MFSFET applications.