Hot Isostatic Pressing of Chromium Nitrides (Cr2N and CrN) Prepared by Self-Propagating High-Temperature Synthesis
Cr2N, CrN, and their mixtures (with desired fractions) have been prepared via self‐propagating high‐temperature synthesis (SHS) under a controlled nitrogen pressure, followed by hot isostatic pressing at 1300°C and 196 MPa under an atmosphere of argon gas. The combustion temperature increased as the...
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Published in | Journal of the American Ceramic Society Vol. 84; no. 9; pp. 2120 - 2122 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Westerville, Ohio
American Ceramics Society
01.09.2001
Blackwell Wiley Subscription Services, Inc |
Subjects | |
Online Access | Get full text |
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Summary: | Cr2N, CrN, and their mixtures (with desired fractions) have been prepared via self‐propagating high‐temperature synthesis (SHS) under a controlled nitrogen pressure, followed by hot isostatic pressing at 1300°C and 196 MPa under an atmosphere of argon gas. The combustion temperature increased as the nitrogen pressure increased. Single‐phase Cr2N was formed at 1040°C under a pressure of 0.18 MPa, and single‐phase CrN was formed at 1730°C under a pressure of 2 MPa. The mechanical properties of the dense nitride ceramics (99.2% of the theoretical density) have been examined; the Vickers hardness (11.2 GPa for CrN and 14.5 GPa for Cr2N) increased linearly as the fraction of Cr2N increased, whereas the fracture toughness (∼4.7 MPa·m1/2) and bending strength (∼355 MPa) are constant, regardless of the fraction of Cr2N/CrN. |
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Bibliography: | ark:/67375/WNG-R405DX84-5 ArticleID:JACE2120 istex:A3DBD84F2D4852429270EE9470C0804240EE5313 This work was supported by a grant to Research Center for Advanced Science and Technology at Doshisha University from the Ministry of Education, Japan. Member, American Ceramic Society. J. L. Smialek—contributing editor Author to whom correspondence should be addressed. ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0002-7820 1551-2916 |
DOI: | 10.1111/j.1151-2916.2001.tb00969.x |