Hot Isostatic Pressing of Chromium Nitrides (Cr2N and CrN) Prepared by Self-Propagating High-Temperature Synthesis

Cr2N, CrN, and their mixtures (with desired fractions) have been prepared via self‐propagating high‐temperature synthesis (SHS) under a controlled nitrogen pressure, followed by hot isostatic pressing at 1300°C and 196 MPa under an atmosphere of argon gas. The combustion temperature increased as the...

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Bibliographic Details
Published inJournal of the American Ceramic Society Vol. 84; no. 9; pp. 2120 - 2122
Main Authors Hirota, Ken, Takano, Yoshihiko, Yoshinaka, Masaru, Yamaguchi, Osamu
Format Journal Article
LanguageEnglish
Published Westerville, Ohio American Ceramics Society 01.09.2001
Blackwell
Wiley Subscription Services, Inc
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Summary:Cr2N, CrN, and their mixtures (with desired fractions) have been prepared via self‐propagating high‐temperature synthesis (SHS) under a controlled nitrogen pressure, followed by hot isostatic pressing at 1300°C and 196 MPa under an atmosphere of argon gas. The combustion temperature increased as the nitrogen pressure increased. Single‐phase Cr2N was formed at 1040°C under a pressure of 0.18 MPa, and single‐phase CrN was formed at 1730°C under a pressure of 2 MPa. The mechanical properties of the dense nitride ceramics (99.2% of the theoretical density) have been examined; the Vickers hardness (11.2 GPa for CrN and 14.5 GPa for Cr2N) increased linearly as the fraction of Cr2N increased, whereas the fracture toughness (∼4.7 MPa·m1/2) and bending strength (∼355 MPa) are constant, regardless of the fraction of Cr2N/CrN.
Bibliography:ark:/67375/WNG-R405DX84-5
ArticleID:JACE2120
istex:A3DBD84F2D4852429270EE9470C0804240EE5313
This work was supported by a grant to Research Center for Advanced Science and Technology at Doshisha University from the Ministry of Education, Japan.
Member, American Ceramic Society.
J. L. Smialek—contributing editor
Author to whom correspondence should be addressed.
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.2001.tb00969.x