Alkane activation on crystalline metal oxide surfaces
Advances in the fundamental understanding of alkane activation on oxide surfaces are essential for developing new catalysts that efficiently and selectively promote chemical transformations of alkanes. In this tutorial review, we discuss the current understanding of alkane activation on crystalline...
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| Published in | Chemical Society reviews Vol. 43; no. 22; pp. 7536 - 7547 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
England
21.11.2014
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| Online Access | Get full text |
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| Summary: | Advances in the fundamental understanding of alkane activation on oxide surfaces are essential for developing new catalysts that efficiently and selectively promote chemical transformations of alkanes. In this tutorial review, we discuss the current understanding of alkane activation on crystalline metal oxide surfaces, and focus mainly on summarizing our findings on alkane adsorption and C-H bond cleavage on the PdO(101) surface as determined from model ultrahigh vacuum experiments and theoretical calculations. These studies show that alkanes form strongly-bound σ-complexes on PdO(101) by datively bonding with coordinatively-unsaturated Pd atoms and that these molecularly adsorbed species serve as precursors for C-H bond activation on the oxide surface. In addition to discussing the binding and properties of alkane σ-complexes on PdO(101), we also summarize recent advances in kinetic models to predict alkane dissociation rates on solid surfaces. Lastly, we highlight computations which predict that the formation and facile C-H bond activation of alkane σ-complexes also occurs on RuO
2
and IrO
2
surfaces.
Late transition-metal oxide surfaces that expose coordinatively-unsaturated metal atoms promote the formation and bond activation of alkane σ-complexes. |
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| Bibliography: | Abbin Antony earned his doctoral degree in chemical engineering from University of Florida in 2013, where he worked with Jason F. Weaver and Aravind R. Asthagiri to explore different late-transition metal oxide surfaces and investigate the chemical activity of various molecular species on these surfaces employing ab initio quantum mechanical techniques. He is currently working as a plasma/dry etch process development engineer at Intel Corporation. Dr Aravind Asthagiri obtained his PhD in Chemical Engineering from Carnegie Mellon University (2003). In his doctoral research with Professor David Sholl, he examined the enantiospecificity of chiral metal surfaces and the growth of thin metal films on metal oxides. From 2005-2010 he was an assistant professor at the University of Florida before joining The Ohio State University in the fall of 2010 as an associate professor. His research involves the application of atomistic simulations to examine and rationally design novel materials, with a focus on energy-related applications. Jason F. Weaver earned a PhD degree from Stanford University in 1998, working with Robert Madix to investigate alkane adsorption on transition metal surfaces using molecular beam scattering techniques and molecular simulations. He joined the faculty at the University of Florida in 1999, where he is currently the Charles Stokes Professor of Chemical Engineering and a Professor of Chemistry by courtesy. Prof. Weaver';s research has focused on the growth and surface chemical properties of Pt and Pd oxide films, and combines UHV surface analysis methods and molecular simulations. He is also studying the surface chemistry of rare earth oxides. Can Hakanoglu earned his Bachelor of Science degree from the chemical engineering department of the Istanbul Technical University in 2006. He joined the chemical engineering master's program at the University of Florida in 2007. He began working with Dr Jason Weaver in 2008 and earned his PhD degree from the chemical engineering department of the University of Florida in 2013. His research mainly focused on investigating the kinetics of alkane adsorption and reaction on Pd oxide surfaces using ultrahigh vacuum techniques. He joined the Intel Corp. Logic Technology Development Group in 2013 where he currently works as a process engineer. ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| ISSN: | 0306-0012 1460-4744 |
| DOI: | 10.1039/c3cs60420a |