Fabrication of high-quality graphene by hot-filament thermal chemical vapor deposition

To the best of our knowledge, the previously reported graphene fabricated using catalytic chemical vapor deposition techniques contained a high defect density, which will hinder its opto-electronic properties. In this work, the effects of two crucial parameters, namely deposition time and hydrogen f...

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Bibliographic Details
Published inCarbon (New York) Vol. 86; pp. 1 - 11
Main Authors Syed Muhammad Hafiz, Chong, Su Kong, Huang, Nay Ming, Abdul Rahman, Saadah
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.05.2015
Subjects
Carbon
CHEMICAL VAPOR DEPOSITION
Copper
COPPER OXIDE
Defects
Density
DEPOSITION
FABRICATION
FOIL
Foils
Graphene
MICA
VAPOR DEPOSITION
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Summary:To the best of our knowledge, the previously reported graphene fabricated using catalytic chemical vapor deposition techniques contained a high defect density, which will hinder its opto-electronic properties. In this work, the effects of two crucial parameters, namely deposition time and hydrogen flow rate on the growth of graphene using a hot-filament thermal chemical vapor deposition technique were systematically studied. Fabrications were conducted at substrate and filament temperatures of 1000°C and 1750°C, respectively. Very low ID/IG ratios (≪0.1) were obtained for all the samples, which reflected the formation of high-quality graphene deposited on Cu foils. A quasi-static equilibrium copper vapor inside an alumina tube was found to be an important factor to obtain a low defect density graphene. A growth mechanism was then proposed, where the cuprous oxide (Cu2O) acted as a nucleation site for graphene growth.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2015.01.018