Changing the thickness of two layers: i-ZnO nanorods, p-Cu2O and its influence on the carriers transport mechanism of the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction

• Published in: SpringerPlus Vol. 5; no. 1; p. 710
• Main Authors: Ke, Nguyen Huu, Trinh, Le Thi Tuyet, Phung, Pham Kim, Loan, Phan Thi Kieu, Tuan, Dao Anh, Truong, Nguyen Huu, Tran, Cao Vinh, Hung, Le Vu Tuan
• Format: Journal Article
• Language: English
• Published: Cham Springer International Publishing 13.06.2016
• Subjects: Advancing Global Surgery; Humanities and Social Sciences; multidisciplinary; Physics and Astronomy; Science; Science (multidisciplinary); ZnO nanorods; Solar cells; Cu; Electrochemical method; O layer; Heterojunction; Cu2O layer
• ISSN: 2193-1801; 2193-1801
• DOI: 10.1186/s40064-016-2468-y

In this study, two layers: i-ZnO nanorods and p-Cu 2 O were fabricated by electrochemical deposition. The fabricating process was the initial formation of ZnO nanorods layer on the n-IGZO thin film which was prepared by sputtering method, then a p-Cu 2 O layer was deposited on top of rods to form the p-Cu 2 O/i-ZnO nanorods/n-ZnO heterojunction. The XRD, SEM, UV–VIS, I–V characteristics methods were used to define structure, optical and electrical properties of these heterojunction layers. The fabricating conditions and thickness of the Cu 2 O layers significantly affected to the formation, microstructure, electrical and optical properties of the junction. The length of i-ZnO nanorods layer in the structure of the heterojunction has strongly affected to the carriers transport mechanism and performance of this heterojunction.