Effect of pre-sintering temperature on the structural and dielectric properties of (Ba0.5Sr0.5)TiO3 thin films deposited by sol-gel technique

• Published in: Ceramics international Vol. 30; no. 8; pp. 2283 - 2287
• Main Authors: ROY, Somnath C, BHATNAGAR, M. C, SHARMA, G. L, MANCHANDA, R, BALAKRISHNAN, V. R
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Science 2004
• Subjects: Applied sciences; Building materials. Ceramics. Glasses; Ceramic industries; Chemical industry and chemicals; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Dielectric thin films; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electrotechnical and electronic ceramics; Exact sciences and technology; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Other inorganic semiconductors; Physics; Technical ceramics; Dielectric loss; Electrical conductivity; Electrical properties; Dielectric properties; Temperature effect; Barium titanates; Experimental study; Fabrication property relation; X ray diffraction; Oxide ceramics; Thin film; Sol gel process; Sintering; Strontium titanates; Fabrication structure relation; Manufacturing; Infrared spectrum; Permittivity; Barium Strontium Titanates Mixed; Growth from solution; Electroceramics
• ISSN: 0272-8842; 1873-3956
• DOI: 10.1016/j.ceramint.2004.01.008

(Ba0.5Sr0.5)TiO3 thin films were deposited by the sol-gel technique and the effect of pre-sintering temperature on the structural and dielectric properties was studied. Two sets of films were prepared; one set pre-sintered at 400 C and the other at 600 C. In all the cases, the final sintering temperature was kept fixed at 700 C for 2 h. The films were characterised by XRD, FTIR, dielectric constant, and loss measurements and AC conductivity studies. With an increase in the pre-sintering temperature from 400 to 600 C, the dielectric constant increases from 225 to 383 (measured at 100 kHz); whereas, the loss tangent remains nearly constant at 0.03-0.05. The XRD results show better crystallinity and enhanced grain growth in the case of films pre-sintered at 600 C. The FTIR spectra reveals that there is significant removal of organic materials in films with higher pre-sintering temperature as compared to that with lower pre-sintering temperature. The AC conductivity studies show a decrease in the frequency exponent "s" with an increase in the pre-sintering temperature which has been correlated with the reduction in oxygen vacancy densities in the sample with higher pre-sintering temperature. 22 refs.