Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing

• Published in: IEEE journal of the Electron Devices Society Vol. 9; pp. 278 - 285
• Main Authors: Hamada, Takuya, Tomiya, Shigetaka, Tatsumi, Tetsuya, Hamada, Masaya, Horiguchi, Taiga, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
• Format: Journal Article
• Language: English
• Published: New York IEEE 2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Activation annealing; Annealing furnaces; Carrier density; Charge carrier density; Chlorine; chlorine plasma; Dopants; Doping; Electrical resistivity; Inductively coupled plasma; Molybdenum disulfide; molybdenum disulfide (MoS₂); Plasmas; radio-frequency magnetron sputtering; Reduction; Resistance; Sputtering; Sulfur; transition metal dichalcogenide (TMDC); Vapor resistance
• ISSN: 2168-6734; 2168-6734
• DOI: 10.1109/JEDS.2021.3050801

Sheet resistance (R sheet ) reduction of a-few-layered molybdenum disulfide (MoS 2 ) film using sputtering is investigated in this study. To enhance the carrier density, chlorine (Cl2) gas excited by inductively coupled plasma is introduced as a substitute for sulfur. To electrically activate the Cl dopants and simultaneously prevent out-diffusion of sulfur, a furnace annealing was performed in sulfur-vapor ambient. Consequently, the R sheet in the MoS 2 film with the Cl 2 plasma treatment remarkably reduced by one order lower than that without one, because of the activation of Cl dopants in the MoS 2 film.