Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge

• Published in: IEEE access Vol. 10; pp. 86270 - 86285
• Main Authors: Pino-Monroy, Dayana A., Scheer, Patrick, Bouchoucha, Mohamed Khalil, Galup-Montoro, Carlos, Barragan, Manuel J., Cathelin, Philippe, Fournier, Jean-Michel, Cathelin, Andreia, Bourdel, Sylvain
• Format: Journal Article
• Language: English
• Published: Piscataway IEEE 2022; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 28~nm FD-SOI; Analytical models; Analytical MOSFET modeling; charge-based MOSFET model; Circuit design; Context modeling; design-oriented MOSFET model; Engineering Sciences; Integrated circuit modeling; inversion coefficient; Mathematical models; Micro and nanotechnologies; Microelectronics; MOS devices; MOSFET; MOSFETs; nonlinear distortion; Parameters; Semiconductor device modeling; Semiconductor devices; short-channel effects; Technology assessment; Transistors
• ISSN: 2169-3536; 2169-3536
• DOI: 10.1109/ACCESS.2022.3198644

This paper presents a 7-parameter analytical model of the MOS transistor based on the inversion charge targeted at the development of simplified analytical circuit design methodologies that take into account the physics of the MOS transistor. The proposed design-oriented model allows for the first time to describe both the main short-channel effects of advanced nanometric technologies and the dependence of the transistor drain current on the drain voltage, while the model remains valid for all bias regimes (from weak to strong inversion) and for all operating regions (linear and saturated). A simple procedure based on the device physics is proposed to estimate the transistor model parameters for a given technology. Furthermore, analytical expressions of the current derivatives are developed targeting different design scenarios. The accuracy of the proposed model is validated by direct comparison to silicon measurements of N-MOS transistors in 28 nm FD-SOI technology for channel width of <inline-formula> <tex-math notation="LaTeX">1~\mu \text{m} </tex-math></inline-formula> and channel lengths of 30 nm, 60 nm and 150 nm, and also to simulations performed with an industry-standard compact model.