Condition of Si crystal formation by vaporizing Na from NaSi

• Published in: Journal of crystal growth Vol. 355; no. 1; pp. 109 - 112
• Main Authors: Morito, Haruhiko, Karahashi, Taiki, Yamane, Hisanori
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.09.2012; Elsevier
• Subjects: A1. Phase diagrams; A2. Growth from solutions; A2. Single crystal growth; B1. Silicon; B1. Sodium silicide; Cross-disciplinary physics: materials science; rheology; Crystal growth; Crystals; Evaporation; Exact sciences and technology; Growth from solutions; Materials science; Melts; Methods of crystal growth; physics of crystal growth; Phase diagrams and microstructures developed by solidification and solid-solid phase transformations; Phase diagrams of metals and alloys; Physics; Silicon; Single crystals; Vapor pressure; Vaporizing; A2. Growth from solutions; B1. Sodium silicide; B1. Silicon; A2. Single crystal growth; A1. Phase diagrams; Crystal growth; Phase diagrams; Vapor pressure; Silicides; Evaporation; Monocrystals; Sodium; Silicon; Growth from solution
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2012.06.032

NaSi was heated at various Na vapor pressures (pNa 0.1–1.2atm) and temperatures (973–1173K) to investigate the condition of Si crystal formation from NaSi by Na evaporation. Silicon single crystals 1–3mm in diameter were grown by evaporation of Na from Na–Si melt at 1173K and pNa=0.74atm. ► We investigated the formation of Si and NaSi at various temperatures and Na vapor pressures. ► We revealed the condition of Si crystallization from Na–Si melt. ► Si single crystals of about 1–3mm were obtained by evaporation of Na from Na–Si melt.