Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices

• Published in: Materials Vol. 16; no. 3; p. 1249
• Main Authors: Pyo, Juyeong, Bae, Jong-Ho, Kim, Sungjun, Cho, Seongjae
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 01.02.2023; MDPI
• Subjects: Chemical composition; Electrodes; Energy consumption; IGZO; Indium gallium zinc oxide; Information management; Neural networks; neuromorphic system; Neurons; Semiconductor devices; short-term memory; synaptic device; three-terminal device; Transistors; South Korea; synaptic device; IGZO; three-terminal device; short-term memory; neuromorphic system
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma16031249

A three-terminal synaptic transistor enables more accurate controllability over the conductance compared with traditional two-terminal synaptic devices for the synaptic devices in hardware-oriented neuromorphic systems. In this work, we fabricated IGZO-based three-terminal devices comprising HfAlO and CeO layers to demonstrate the synaptic operations. The chemical compositions and thicknesses of the devices were verified by transmission electron microscopy and energy dispersive spectroscopy in cooperation. The excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP), and short-term depression (STD) of the synaptic devices were realized for the short-term memory behaviors. The IGZO-based three-terminal synaptic transistor could thus be controlled appropriately by the amplitude, width, and interval time of the pulses for implementing the neuromorphic systems.