Reaction kinetics of glissile interstitial clusters in a crystal containing voids and dislocations

• Published in: Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties Vol. 81; no. 10; pp. 2515 - 2532
• Main Authors: Barashev, A. V., Golubov, S. I., Trinkaus, H.
• Format: Journal Article
• Language: English
• Published: Taylor & Francis Group 01.10.2001
• ISSN: 0141-8610; 1460-6992
• DOI: 10.1080/01418610108217161

It has been shown in recent years that one-dimensional (1D) atomic transport plays an important role in radiation damage accumulation in metallic materials under cascade irradiation conditions. This transport is due to clusters of self-interstitial atoms (SIAs) that form directly in cascades and migrate along close-packed crystallographic directions. The reaction kinetics of 1D migrating clusters are known to be qualitatively different from those of three-dimensional diffusing point defects. It has been suggested that deviation of the reaction kinetics of SIA clusters from those for pure 1D diffusion is important for the further development of the theory of radiation damage. In the present paper, an analysis of the change in the reaction kinetics of SIA clusters with voids and dislocations due to spontaneous changes of the cluster glide direction is presented. Two forms of spatial distribution of voids, namely random and in the form of a lattice, are considered.