Design and operating characteristics of a metalorganic vapor phase epitaxy production scale, vertical, high speed, rotating disk reactor

• Published in: Journal of crystal growth Vol. 145; no. 1; pp. 655 - 661
• Main Authors: Tompa, G.S., Zawadzki, P.A., Moy, K., McKee, M., Thompson, A.G., Gurary, A.I., Wolak, E., Esherick, P., Breiland, W.G., Evans, G.H., Bulitka, N., Hennessy, J., Moore, C.J.L.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.1994; Elsevier
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Scanning electron microscopy; Parametric sensitivity; Epitaxy; Organometallic compound; Experimental study; Thin film; Growth from vapor; Repeatability; Microelectronic fabrication; Chemical reactor; Manufacturing process; System description; Rotating disk; Production equipment; Thermal analysis; Production capacity
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(94)91122-3

The optoelectronic and digital compound semiconductor electronics industry is a critical area of development for the 90's and into the next century. Optoelectronic devices are used in all aspects of communications (lasers and detectors) and displays (LEDs). High speed electronic devices find applications in wireless communications, microwave systems, and advanced computers. As production levels of these devices increase, so too does the need for economical and high yield production equipment. Production features must emphasize repeatability, improved safety, environmental compatability, waste reduction, reliability (maximum MTBF), serviceability (minimum MTTR), flexible manufacturing, integrated manufacturing, and economics. In this paper, we report on the development and characteristics of such a large area MOVPE production Rotating Disk Reactor system (300 mm diameter deposition platform). This new reactor has been used to produce multiple 4 inch GaAs/AlAs Bragg reflectors with <1.0% variation in peak reflectivity wavelength and to simultaneously demonstrate multiple 2 inch InGaP films with better than ±1.5 nm photoluminescence wavelength uniformity.