Nanoscale mapping of intrinsic defects in single-layer graphene using tip-enhanced Raman spectroscopy
Non-gap mode tip-enhanced Raman spectroscopy (TERS) is used for the first time to successfully map the intrinsic defects in single-layer graphene with 20 nm spatial resolution. The nanoscale Raman mapping is enabled by an unprecedented near-field to far-field signal contrast of 8.5 at the Ag-coated...
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| Published in | Chemical communications (Cambridge, England) Vol. 52; no. 53; pp. 8227 - 823 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
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01.01.2016
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| Abstract | Non-gap mode tip-enhanced Raman spectroscopy (TERS) is used for the first time to successfully map the intrinsic defects in single-layer graphene with 20 nm spatial resolution. The nanoscale Raman mapping is enabled by an unprecedented near-field to far-field signal contrast of 8.5 at the Ag-coated TERS tip-apex. These results demonstrate the potential of TERS for characterisation of defects in single-layer graphene-based devices at the nanometre length-scale.
Non-gap TERS with a contrast of 8.5 enables TERS mapping of graphene's intrinsic defect with a spatial resolution of 20 nm. |
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| AbstractList | Non-gap mode tip-enhanced Raman spectroscopy (TERS) is used for the first time to successfully map the intrinsic defects in single-layer graphene with 20 nm spatial resolution. The nanoscale Raman mapping is enabled by an unprecedented near-field to far-field signal contrast of 8.5 at the Ag-coated TERS tip-apex. These results demonstrate the potential of TERS for characterisation of defects in single-layer graphene-based devices at the nanometre length-scale. Non-gap mode tip-enhanced Raman spectroscopy (TERS) is used for the first time to successfully map the intrinsic defects in single-layer graphene with 20 nm spatial resolution. The nanoscale Raman mapping is enabled by an unprecedented near-field to far-field signal contrast of 8.5 at the Ag-coated TERS tip-apex. These results demonstrate the potential of TERS for characterisation of defects in single-layer graphene-based devices at the nanometre length-scale.Non-gap mode tip-enhanced Raman spectroscopy (TERS) is used for the first time to successfully map the intrinsic defects in single-layer graphene with 20 nm spatial resolution. The nanoscale Raman mapping is enabled by an unprecedented near-field to far-field signal contrast of 8.5 at the Ag-coated TERS tip-apex. These results demonstrate the potential of TERS for characterisation of defects in single-layer graphene-based devices at the nanometre length-scale. Non-gap mode tip-enhanced Raman spectroscopy (TERS) is used for the first time to successfully map the intrinsic defects in single-layer graphene with 20 nm spatial resolution. The nanoscale Raman mapping is enabled by an unprecedented near-field to far-field signal contrast of 8.5 at the Ag-coated TERS tip-apex. These results demonstrate the potential of TERS for characterisation of defects in single-layer graphene-based devices at the nanometre length-scale. Non-gap TERS with a contrast of 8.5 enables TERS mapping of graphene's intrinsic defect with a spatial resolution of 20 nm. |
| Author | Kumar, Naresh Roy, Debdulal Su, Weitao Dai, Ning |
| AuthorAffiliation | Institute of Materials Physics Chinese Academy of Sciences Ningbo Institute of Materials Technology & Engineering National Physical Laboratory Hangzhou Dianzi University |
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| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/27279142$$D View this record in MEDLINE/PubMed |
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| SubjectTerms | chemical compounds chemical reactions Defects Devices Graphene Mapping Nanostructure Raman spectroscopy Silver Spatial resolution |
| Title | Nanoscale mapping of intrinsic defects in single-layer graphene using tip-enhanced Raman spectroscopy |
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