Nanoscale mapping of intrinsic defects in single-layer graphene using tip-enhanced Raman spectroscopy

Non-gap mode tip-enhanced Raman spectroscopy (TERS) is used for the first time to successfully map the intrinsic defects in single-layer graphene with 20 nm spatial resolution. The nanoscale Raman mapping is enabled by an unprecedented near-field to far-field signal contrast of 8.5 at the Ag-coated...

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Bibliographic Details
Published inChemical communications (Cambridge, England) Vol. 52; no. 53; pp. 8227 - 823
Main Authors Su, Weitao, Kumar, Naresh, Dai, Ning, Roy, Debdulal
Format Journal Article
LanguageEnglish
Published England 01.01.2016
Subjects
chemical compounds
chemical reactions
Defects
Devices
Graphene
Mapping
Nanostructure
Raman spectroscopy
Silver
Spatial resolution
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Summary:Non-gap mode tip-enhanced Raman spectroscopy (TERS) is used for the first time to successfully map the intrinsic defects in single-layer graphene with 20 nm spatial resolution. The nanoscale Raman mapping is enabled by an unprecedented near-field to far-field signal contrast of 8.5 at the Ag-coated TERS tip-apex. These results demonstrate the potential of TERS for characterisation of defects in single-layer graphene-based devices at the nanometre length-scale. Non-gap TERS with a contrast of 8.5 enables TERS mapping of graphene's intrinsic defect with a spatial resolution of 20 nm.
Bibliography:10.1039/c6cc01990k
Electronic supplementary information (ESI) available. See DOI
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1359-7345
1364-548X
1364-548X
DOI:10.1039/c6cc01990k