Self-aligned modulation-doped (Al,Ga)As/GaAs field-effect transistors

• Published in: IEEE electron device letters Vol. 5; no. 4; pp. 129 - 131
• Main Authors: Cirillo, N.C., Abrokwah, J.K., Shur, M.S.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.04.1984; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Current-voltage characteristics; Electrical resistance measurement; Electronics; Electrons; Epitaxial layers; Exact sciences and technology; Fabrication; FETs; Gallium arsenide; HEMTs; MODFETs; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Very high speed integrated circuits; Gallium Arsenides; Field effect transistor; Operation study; Microelectronic fabrication; Ion implantation; Self alignment; Aluminium Gallium Arsenides Mixed
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/EDL.1984.25857

The first modulation-doped (Al,Ga)As/GaAs field-effect transistors (MODFET's) have been fabricated using a self-aligned ion-implantation process. Measured extrinsic transconductances of 190 mS/mm were achieved at 300 K with source resistances of 1 Ω.mm. The highest currents yet reported for such device structures, in excess of 350 mA/mm, were obtained. A value of the maximum two-dimensional electron gas concentration of nearly 1.2 × 10 12 cm -2 was obtained from an analysis of the FET drain current-voltage characteristics using the charge-control model. These results hold promise for the practical fabrication of very high speed integrated circuits based on MODFET's, using a completely planar self-aligned ion-implantation process.