740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

• Published in: Journal of crystal growth Vol. 343; no. 1; pp. 13 - 16
• Main Authors: Ohkawa, Kazuhiro, Watanabe, Tomomasa, Sakamoto, Masanori, Hirako, Akira, Deura, Momoko
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.03.2012; Elsevier
• Subjects: A1. Crystal structure; A3. Metalorganic vapor phase epitaxy; Applied sciences; B1. Nitrides; B2. Semiconducting III–V materials; B3. Light emitting diodes; Cross-disciplinary physics: materials science; rheology; Crystal growth; Electronics; Emission; Exact sciences and technology; Gas temperature; Indium; Indium gallium nitrides; Materials; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optoelectronic devices; Physics; Sapphire; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Vapor phase epitaxy; growth from vapor phase; Walls; Wavelengths; B3. Light emitting diodes; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials; A1. Crystal structure; Quantum numbers; Quantum wells; Light emitting diodes; Optoelectronic devices; VPE; Indium; Gallium nitride; B2. Semiconducting III-V materials; Relaxation; MOVPE method; Indium nitride; Nanostructured materials; III-V semiconductors; Crystal structure
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2011.12.075

We have realized for the first time deep-red emission from InGaN-based light-emitting diodes on c-plane sapphire substrates grown by metalorganic vapor-phase epitaxy. The peak wavelength was 740nm by continuous current injection, in spite of a wide full-width at half-maximum. Indium incorporation was enhanced by a smaller distance of the opposing wall of the reactor from the susceptor, which resulted in raising the gas temperature. In addition, a higher number of quantum wells led to the relaxation of InGaN well layers and thus enhanced indium incorporation. ► We realized deep-red emission from InGaN-based LEDs on c-plane sapphire substrates. ► The electroluminescence peak wavelength was 740nm, in spite of a wide FWHM. ► Indium incorporation was enhanced by a smaller distance of the reactor. ► A number of quantum wells led to the relaxation of InGaN wells and higher In content.