APA (7th ed.) Citation

Ranjan, R., Kashyap, N., & Raman, A. (2022). Design and investigation of field plate-based vertical GAA – β-(AlGa)2O3/Ga2O3 high electron mobility transistor. Micro and nanostructures (2022), 164, 107117. https://doi.org/10.1016/j.spmi.2021.107117

Chicago Style (17th ed.) Citation

Ranjan, Ravi, Nitesh Kashyap, and Ashish Raman. "Design and Investigation of Field Plate-based Vertical GAA – β-(AlGa)2O3/Ga2O3 High Electron Mobility Transistor." Micro and Nanostructures (2022) 164 (2022): 107117. https://doi.org/10.1016/j.spmi.2021.107117.

MLA (9th ed.) Citation

Ranjan, Ravi, et al. "Design and Investigation of Field Plate-based Vertical GAA – β-(AlGa)2O3/Ga2O3 High Electron Mobility Transistor." Micro and Nanostructures (2022), vol. 164, 2022, p. 107117, https://doi.org/10.1016/j.spmi.2021.107117.