Transparent conductive characteristics of Ti:ITO films deposited by RF magnetron sputtering at low substrate temperature

• Published in: Surface & coatings technology Vol. 205; pp. S210 - S215
• Main Authors: Paeng, Sung-Hwan, Park, Min-Woo, Sung, Youl-Moon
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 25.12.2010; Elsevier
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Deposition; Differential scanning calorimetry; Dye-sensitized solar cell; Dyes; Electrodes; Electrolytes; Exact sciences and technology; Indium tin oxide; Magnetron sputtering; Materials science; Metals. Metallurgy; Physics; Production techniques; Radio frequencies; RF magnetron sputtering; Surface treatment; Surface treatments; Ti:ITO film; Titanium dioxide; Transparent conductive oxide; RF magnetron sputtering; Dye-sensitized solar cell; Ti:ITO film; Transparent conductive oxide; Solar cells; Magnetrons; Temperature; Physical vapor deposition; Surface treatments; Radiofrequency sputtering; Sputtering; Low temperature
• ISSN: 0257-8972; 1879-3347
• DOI: 10.1016/j.surfcoat.2010.07.094

Transparent conductive metal oxide films of titanium-doped indium–tin-oxide (Ti:ITO) and indium-tin-oxide (ITO) were deposited by a dual target type radio frequency (RF) magnetron sputtering, and the films were applied to dye-sensitized solar cells (DSCs). Electrical and optical properties of the films were investigated as well as the film structure and morphology. At an annealing temperature of 450 °C, the resistivity of the Ti:ITO and ITO films are about 5 × 10 4 and 1.1 × 10 3 Ωcm, and the transmittances of both films at a wavelength of 550 nm reach about 85–90%. The impedance in the Ti:ITO-based DSC sample is 31.9, 49.6, and 20.2, for the counter electrode, the TiO 2/dye/electrolyte interface, and the carrier transport by ions within the electrolyte, respectively. The series resistance, R s , is about 72.4 Ω. Photoconversion efficiency ( η) in the Ti:ITO-based DSC sample is 3.75% ( ff: 0.54, V oc : 0.71 V, J sc : 9.82 mA/cm 2) at 100 mW/cm 2 light intensity.