Growth of Ge quantum dot mediated by boron on Ge wetting layer

• Published in: Journal of crystal growth Vol. 279; no. 3; pp. 329 - 334
• Main Authors: Shi, W.H., Li, C.B., Luo, L.P., Cheng, B.W., Wang, Q.M.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.06.2005; Elsevier
• Subjects: A1. Nanostructures; A1. Nucleation; A3. Chemical vapour deposition process; B2. Semiconducting germanium; B2. Semiconducting silicon; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum dots; 61.16.Ch; B2. Semiconducting germanium; 68.55.−a; A1. Nanostructures; 81.15.Ef; A1. Nucleation; A3. Chemical vapour deposition process; B2. Semiconducting silicon; Atomic force microscopy; Inorganic compounds; Semiconductor materials; Wetting; Quantum dots; Scattering; Metastable states; 68.55.-a; Crystal growth from vapors; Experimental study; 81.15.Ef A1. Nanostructures; CVD; Thickness; Morphology; Size effect; Germanium; Ultrahigh vacuum; Nanostructured materials; Island structure; A3. ChemicA1 vapour deposition process
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2005.02.051

We report on the influence of boron on the formation of Ge quantum dots. The investigated structure consists of a Ge wetting layer, on which a sub-monolayer boron is deposited and subsequently a Ge top layer. For sufficiently thin Ge top layers, the strain field induced by boron on Ge wetting layer destabilizes the Ge top layer and causes the formation of small Ge quantum dots. However, for thicker Ge top layers, boron on the Ge wetting layer diffuses into Ge layers, compensates partly the strain and delays the evolution of Ge quantum dots. By this method, small Ge quantum dots with high density as well as size uniformity can be formed by optimizing the growth condition.