Silicon oxynitride gas barrier coatings on poly(ether sulfone) by plasma-enhanced chemical vapor deposition

• Published in: Surface & coatings technology Vol. 202; no. 13; pp. 2844 - 2849
• Main Authors: Shim, Juno, Yoon, Ho Gyu, Na, Sang-Hyun, Kim, Insun, Kwak, Soonjong
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 25.03.2008; Elsevier
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Flexible display; Gas barrier; Materials science; Metals. Metallurgy; Physics; Plastic substrate; Poly(ether sulfone); Production techniques; Silicon oxynitride; Surface treatment; Surface treatments; Undercoat; Undercoat; Gas barrier; Flexible display; Poly(ether sulfone); Plastic substrate; Silicon oxynitride; CVD; Plasma; Vapor deposition; Chemical deposition; Surface treatments; Coatings
• ISSN: 0257-8972; 1879-3347
• DOI: 10.1016/j.surfcoat.2007.10.020

Thin silicon oxynitride (SiO x N y ) has been deposited for a gas barrier layer on the surface of poly(ether sulfone) film using plasma-enhanced chemical vapor deposition (PECVD) of a mixture of hexamethyldisiloxane (HMDSO) and ammonia. The chemical structure of the deposited layer varied from organic to inorganic structures depending on RF plasma input power applied to the reaction system. A silicon-based undercoat layer, which has an organic/inorganic hybrid structure, was used as an interfacial buffer layer between the organic PES and inorganic SiO x N y layer. With the help of the undercoat layer, the dense inorganic SiO x N y layer gave a superior oxygen barrier property of 0.2 cm 3/m 2 day at a critical coating thickness of ca. 20 nm. In a highly stressed SiO x N y film, the effect of the undercoat layer was remarkable in preventing crack formation during bending tests.