Microstructural evolution and formation of highly c-axis-oriented aluminum nitride films by reactively magnetron sputtering deposition
Highly (0 0 2) c-axis-oriented AlN films have been successfully deposited on Ti/Si substrates using reactive magnetron radio frequency (RF) sputtering deposition and ideal AlN films could be obtained by fine-tuning the parameters at pressure 5 Pa, temperature of 250 °C, and N 2 ratio 85%. The detail...
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Published in | Journal of crystal growth Vol. 276; no. 3; pp. 525 - 533 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.04.2005
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | Highly (0
0
2)
c-axis-oriented AlN films have been successfully deposited on Ti/Si substrates using reactive magnetron radio frequency (RF) sputtering deposition and ideal AlN films could be obtained by fine-tuning the parameters at pressure 5
Pa, temperature of 250
°C, and N
2 ratio 85%. The detailed layer-by-layer microstructure of AlN films deposited on Ti/Si substrate consists of TiO
2 thin film, amorphous layer without Al
2O
3 particles, transition layer, and the columnar (0
0
2)
c-axis preferred orientation layer.
AlN films possessing a higher deposition rate to form an amorphous layer in the initial deposition stage will result in the lower deposition rate to form following transition and columnar preferred orientation textures. Therefore, we strongly suggest adopting a two-step deposition method, that is, use lower deposition rate to form preferred orientation layers and then a higher deposition rate to form preferred orientation textures. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2004.11.421 |