Microstructural evolution and formation of highly c-axis-oriented aluminum nitride films by reactively magnetron sputtering deposition

• Published in: Journal of crystal growth Vol. 276; no. 3; pp. 525 - 533
• Main Authors: Liu, Wen-Jen, Wu, Shih-Jeh, Chen, Chih-Min, Lai, Yin-Chieh, Chuang, Chun-Han
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2005; Elsevier
• Subjects: A1. Growth mechanism; A1. Transmission electron microscopy; A3. Reactive sputtering; Acoustoelectric effects and surface acoustic waves (saw) in piezoelectrics; B2. Aluminum nitride; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Piezoelectricity and electromechanical effects; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; A3. Reactive sputtering; B2. Aluminum nitride; 68.35.Bs; 68.35.Ct; A1. Transmission electron microscopy; 81.15.Cd; 68.55.Jk; A1. Growth mechanism; Inorganic compounds; Roughness; Acoustic surface waves; XRD; SAED; Texture; Thin films; Aluminium nitrides; 68.55.Jk A1. Growth mechanism; Radiofrequency sputtering; Temperature dependence; Al. Transmission electron microscopy; Thick films; Crystallization; Binary compounds; Amorphous state; Experimental study; Preferred orientation; Columnar structure; Hexagonal lattices; Transmission electron microscopy; Growth mechanism; Microstructure
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.11.421

Highly (0 0 2) c-axis-oriented AlN films have been successfully deposited on Ti/Si substrates using reactive magnetron radio frequency (RF) sputtering deposition and ideal AlN films could be obtained by fine-tuning the parameters at pressure 5 Pa, temperature of 250 °C, and N 2 ratio 85%. The detailed layer-by-layer microstructure of AlN films deposited on Ti/Si substrate consists of TiO 2 thin film, amorphous layer without Al 2O 3 particles, transition layer, and the columnar (0 0 2) c-axis preferred orientation layer. AlN films possessing a higher deposition rate to form an amorphous layer in the initial deposition stage will result in the lower deposition rate to form following transition and columnar preferred orientation textures. Therefore, we strongly suggest adopting a two-step deposition method, that is, use lower deposition rate to form preferred orientation layers and then a higher deposition rate to form preferred orientation textures.