Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

• Published in: IEEE electron device letters Vol. 34; no. 4; pp. 502 - 504
• Main Authors: Tian-Jian Chu, Ting-Chang Chang, Tsung-Ming Tsai, Hsing-Hua Wu, Jung-Hui Chen, Kuan-Chang Chang, Tai-Fa Young, Kai-Hsang Chen, Yong-En Syu, Geng-Wei Chang, Yao-Feng Chang, Min-Chen Chen, Jyun-Hao Lou, Jhih-Hong Pan, Jian-Yu Chen, Ya-Hsiang Tai, Cong Ye, Hao Wang, Sze, Simon M.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.04.2013; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Design. Technologies. Operation analysis. Testing; Educational institutions; Electrodes; Electronics; Exact sciences and technology; Forming process; Hafnium compounds; hafnium oxide ( \hbox{HfO}_{2}); Integrated circuits; Integrated circuits by function (including memories and processors); nonvolatile memory; Resistance; resistance switching; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Switches; Tin; Random access memory; hafnium oxide (HfO; Hafnium oxide; ); Switching; Degradation; Forming process; Non volatile memory; resistance switching; Integrated circuit; Electrical conductivity transitions; non-volatile memory; Damaging; Ultrafast process
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2013.2242843

In this letter, we presented that the charge quantity is the critical factor for forming process. Forming is a pivotal process in resistance random access memory to activate the resistance switching behavior. However, overforming would lead to device damage. In general, the overshoot current has been considered as a degradation reason during the forming process. In this letter, the quantity of charge through the switching layer has been proven as the key element in the formation of the conduction path. Ultrafast pulse forming can form a discontinuous conduction path to reduce the operation power.