Room temperature ferromagnetism in CrGaN: Dependence on growth conditions in rf N-plasma molecular beam epitaxy
Here, we report the influence of the growth conditions for CrGaN grown with the N-polarity on sapphire (0 0 0 1) using radio frequency N plasma-assisted molecular beam epitaxy. Samples are grown under different Ga/N flux ratio of 0.65–1.0 at substrate temperatures of 650 and 700 ∘ C . The Cr/Ga flux...
Saved in:
Published in | Journal of crystal growth Vol. 285; no. 3; pp. 300 - 311 |
---|---|
Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.12.2005
Elsevier |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Here, we report the influence of the growth conditions for CrGaN grown with the N-polarity on sapphire (0
0
0
1) using radio frequency N plasma-assisted molecular beam epitaxy. Samples are grown under different Ga/N flux ratio of 0.65–1.0 at substrate temperatures of 650 and
700
∘
C
. The Cr/Ga flux ratio is set to either 3% or 5%. These growth parameters allow to vary over a range of growth conditions from N-rich to Ga-rich. It is shown that the surface condition during growth influences the surface morphology and magnetic properties of CrGaN. In particular, we show that N-rich and metal-rich growth conditions result in room temperature ferromagnetism. Also discussed are the influence of Cr on the surface reconstruction and also the influence of annealing on the properties of the CrGaN film. |
---|---|
Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2005.08.047 |