Ultra low phase noise sapphire-SiGe HBT oscillator

• Published in: IEEE microwave and wireless components letters Vol. 12; no. 5; pp. 157 - 159
• Main Authors: Llopis, O., Cibiel, G., Kersale, Y., Regis, M., Chaubet, M., Giordano, V.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.05.2002; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuit properties; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; Microwave oscillators; Microwave transistors; Microwaves; Noise; Noise levels; Oscillators; Phase noise; Resonators; Running; Silicon germanides; Silicon germanium; Stability; State of the art; Temperature dependence; Temperature distribution; Phase noise; Performance evaluation; C band; Microwave oscillator; Heterojunction bipolar transistors; Whispering gallery mode; Noise level
• ISSN: 1531-1309; 1558-1764
• DOI: 10.1109/7260.1000188

A state of the art C-band oscillator is presented. It is based on a high Q WGM sapphire resonator combined with a low residual phase noise SiGe HBT amplifier. A two oscillator experiment performed on this system has revealed a phase noise level of -133 dBc/Hz at 1 kHz offset from the 4.85 GHz carrier, which is the best published phase noise result for a single loop, free running microwave oscillator.