Magnetic thin-film insulator with ultra-low spin wave damping for coherent nanomagnonics

Wave control in the solid state has opened new avenues in modern information technology. Surface-acoustic-wave-based devices are found as mass market products in 100 millions of cellular phones. Spin waves (magnons) would offer a boost in today's data handling and security implementations, i.e....

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Published inScientific reports Vol. 4; no. 1; p. 6848
Main Authors Yu, Haiming, d'Allivy Kelly, O., Cros, V., Bernard, R., Bortolotti, P., Anane, A., Brandl, F., Huber, R., Stasinopoulos, I., Grundler, D.
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 30.10.2014
Nature Publishing Group
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Summary:Wave control in the solid state has opened new avenues in modern information technology. Surface-acoustic-wave-based devices are found as mass market products in 100 millions of cellular phones. Spin waves (magnons) would offer a boost in today's data handling and security implementations, i.e., image processing and speech recognition. However, nanomagnonic devices realized so far suffer from the relatively short damping length in the metallic ferromagnets amounting to a few 10 micrometers typically. Here we demonstrate that nm-thick YIG films overcome the damping chasm. Using a conventional coplanar waveguide we excite a large series of short-wavelength spin waves (SWs). From the data we estimate a macroscopic of damping length of about 600 micrometers. The intrinsic damping parameter suggests even a record value about 1 mm allowing for magnonics-based nanotechnology with ultra-low damping. In addition, SWs at large wave vector are found to exhibit the non-reciprocal properties relevant for new concepts in nanoscale SW-based logics. We expect our results to provide the basis for coherent data processing with SWs at GHz rates and in large arrays of cellular magnetic arrays, thereby boosting the envisioned image processing and speech recognition.
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Current address: Spintronics Interdisciplinary Center, Beihang University. Department of Electrical Engineering, Beihang University.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep06848