Bulk dislocation core dissociation probed by coherent x rays in silicon

• Published in: Physical review letters Vol. 106; no. 6; p. 065502
• Main Authors: Jacques, V L R, Ravy, S, Le Bolloc'h, D, Pinsolle, E, Sauvage-Simkin, M, Livet, F
• Format: Journal Article
• Language: English
• Published: United States 11.02.2011
• Subjects: Silicon - chemistry; X-Ray Diffraction
• ISSN: 1079-7114
• DOI: 10.1103/physrevlett.106.065502

We report on a new approach to probe bulk dislocations by using coherent x-ray diffraction. Coherent x rays are particularly suited for bulk dislocation studies because lattice phase shifts in condensed matter induce typical diffraction patterns which strongly depend on the fine structure of the dislocation cores. The strength of the method is demonstrated by performing coherent diffraction of a single dislocation loop in silicon. A dissociation of a bulk dislocation is measured and proves to be unusually large compared to surface dislocation dissociations. This work opens a route for the study of dislocation cores in the bulk in a static or dynamical regime, and under various external constraints.