Performance estimation of junctionless multigate transistors

This paper describes the simulation of the electrical characteristics of a new transistor concept called the “Junctionless Multigate Field-Effect Transistor (MuGFET)”. The proposed device has no junctions, a simpler fabrication process, less variability and better electrical properties than classica...

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Bibliographic Details
Published inSolid-state electronics Vol. 54; no. 2; pp. 97 - 103
Main Authors Lee, Chi-Woo, Ferain, Isabelle, Afzalian, Aryan, Yan, Ran, Akhavan, Nima Dehdashti, Razavi, Pedram, Colinge, Jean-Pierre
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.02.2010
Subjects
Devices
Drains
Electrical junctions
Electrical properties
MOSFETs
Multiple-gate MOSFET
Semiconductor devices
Silicon-on-Insulator
Simulation
Transistors
Multiple-gate MOSFET
Silicon-on-Insulator
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Summary:This paper describes the simulation of the electrical characteristics of a new transistor concept called the “Junctionless Multigate Field-Effect Transistor (MuGFET)”. The proposed device has no junctions, a simpler fabrication process, less variability and better electrical properties than classical inversion-mode devices with PN junctions at the source and drain. The simulation results indicate that the junctionless MuGFET is a very promising candidate for future decananometer MOSFET applications.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2009.12.003