Role of oxygen vacancy in optical and gas sensing characteristics of ZnO thin films

• Published in: Journal of alloys and compounds Vol. 541; pp. 376 - 379
• Main Authors: Pati, Sumati, Majumder, S.B., Banerji, P.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier B.V 15.11.2012; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Defects; Emission; Exact sciences and technology; Film thickness; Gas sensors; Grain boundaries; Lattice vacancies; Luminescence; Microstructure; Nanocrystals; Nanocrystals and nanoparticles; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics; Semiconductors; Thin films; Vacancy formation; Vapor deposition; Zinc oxide; Thin films; Grain boundaries; Vapor deposition; Semiconductors; Vacancy formation; Luminescence; Semiconductor materials; Photoluminescence; Nanolayers; MOCVD; Texture; Thickness; Ultraviolet radiation; Vacancy density; Zinc oxide; Optical sensors; Microstructure; Gas sensors; Nanocrystal
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2012.07.014

► ZnO thin films are grown using MOCVD by varying the growth parameters. ► Nonstoichiometry is introduced with an aim to tune the oxygen vacancies in them. ► Gas sensitivity in presence of CO gas is studied. ► The correlation between oxygen vacancies and sensitivity is discussed. Highly (002) textured, ultra-thin (100–160nm), nano-crystalline zinc oxide thin films are grown by metal organic chemical vapor deposition. These films are characterized in terms of structure, microstructure, optical and carbon monoxide gas sensing characteristics. The room-temperature photoluminescence (PL) spectra of these films are characterized by two peaks: the first one at 387nm is due to the near band edge UV emission and the other one ∼496nm is green emission from defect levels. The PL intensity ratio of the defect level and near band edge emission (IDL/INBE) is argued to be an indicator of oxygen vacancy concentration of these films. The response (%) of carbon monoxide gas sensing is found to increase with the film thickness and maximized in film ∼130nm thick. With further increase of film thickness the response % is found to be reduced. Good correlation is observed between the variation of the PL intensity ratio (IDL/INBE) and response% as a function of film thickness. It has been argued that the concentration of oxygen vacancies in turn controls the gas sensing characteristics of the synthesized films. Finally, we have elucidated the interrelation between the oxygen vacancy concentration, film microstructure and the gas sensing characteristics of the synthesized films.