When epitaxy meets plasma: a path to ordered nanosheets arrays
The possibility of a controlled assembly of 2-dimensional (2D) nanosheets (NSs) into ordered arrays or even more sophisticated structures offers tremendous opportunities in the context of fabrication of a variety of NSs based devices. Reports of such ordered NSs are rare and all conventional “top-do...
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| Published in | Scientific reports Vol. 3; no. 1; p. 2427 |
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| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
London
Nature Publishing Group UK
13.08.2013
Nature Publishing Group |
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| Abstract | The possibility of a controlled assembly of 2-dimensional (2D) nanosheets (NSs) into ordered arrays or even more sophisticated structures offers tremendous opportunities in the context of fabrication of a variety of NSs based devices. Reports of such ordered NSs are rare and all conventional “top-down” methods typically led to coarse structures exhibiting only limited surface quality. In this work, we demonstrate a path to directly synthesis ordered NSs arrays in a plasma activated chemical vapor deposition technique utilizing planar defects formed during hetero-epitaxial growth of crystals featuring a close-packed lattice. As an example, the synthesis of 3C-SiC NSs arrays with well-defined orientation on (001) and (111) Si substrates is shown. A detailed analysis identifies planar defects and the plasma environment as key factors determining the resulting 2D NSs arrays. Consequently, a “planar defects induced selective growth” effect is proposed to elucidate the corresponding growth mechanism. |
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| AbstractList | The possibility of a controlled assembly of 2-dimensional (2D) nanosheets (NSs) into ordered arrays or even more sophisticated structures offers tremendous opportunities in the context of fabrication of a variety of NSs based devices. Reports of such ordered NSs are rare and all conventional "top-down" methods typically led to coarse structures exhibiting only limited surface quality. In this work, we demonstrate a path to directly synthesis ordered NSs arrays in a plasma activated chemical vapor deposition technique utilizing planar defects formed during hetero-epitaxial growth of crystals featuring a close-packed lattice. As an example, the synthesis of 3C-SiC NSs arrays with well-defined orientation on (001) and (111) Si substrates is shown. A detailed analysis identifies planar defects and the plasma environment as key factors determining the resulting 2D NSs arrays. Consequently, a "planar defects induced selective growth" effect is proposed to elucidate the corresponding growth mechanism.The possibility of a controlled assembly of 2-dimensional (2D) nanosheets (NSs) into ordered arrays or even more sophisticated structures offers tremendous opportunities in the context of fabrication of a variety of NSs based devices. Reports of such ordered NSs are rare and all conventional "top-down" methods typically led to coarse structures exhibiting only limited surface quality. In this work, we demonstrate a path to directly synthesis ordered NSs arrays in a plasma activated chemical vapor deposition technique utilizing planar defects formed during hetero-epitaxial growth of crystals featuring a close-packed lattice. As an example, the synthesis of 3C-SiC NSs arrays with well-defined orientation on (001) and (111) Si substrates is shown. A detailed analysis identifies planar defects and the plasma environment as key factors determining the resulting 2D NSs arrays. Consequently, a "planar defects induced selective growth" effect is proposed to elucidate the corresponding growth mechanism. The possibility of a controlled assembly of 2-dimensional (2D) nanosheets (NSs) into ordered arrays or even more sophisticated structures offers tremendous opportunities in the context of fabrication of a variety of NSs based devices. Reports of such ordered NSs are rare and all conventional "top-down" methods typically led to coarse structures exhibiting only limited surface quality. In this work, we demonstrate a path to directly synthesis ordered NSs arrays in a plasma activated chemical vapor deposition technique utilizing planar defects formed during hetero-epitaxial growth of crystals featuring a close-packed lattice. As an example, the synthesis of 3C-SiC NSs arrays with well-defined orientation on (001) and (111) Si substrates is shown. A detailed analysis identifies planar defects and the plasma environment as key factors determining the resulting 2D NSs arrays. Consequently, a "planar defects induced selective growth" effect is proposed to elucidate the corresponding growth mechanism. |
| ArticleNumber | 2427 |
| Author | Fuchs, Regina Jiang, Xin Zhang, Lei Zhuang, Hao Staedler, Thorsten |
| Author_xml | – sequence: 1 givenname: Hao surname: Zhuang fullname: Zhuang, Hao organization: Institute of Materials Engineering, University of Siegen – sequence: 2 givenname: Lei surname: Zhang fullname: Zhang, Lei organization: Institute of Materials Engineering, University of Siegen, Peter Grünberg Institute and Ernst Ruska-Centre (ER-C) for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH – sequence: 3 givenname: Regina surname: Fuchs fullname: Fuchs, Regina organization: Institute of Materials Engineering, University of Siegen – sequence: 4 givenname: Thorsten surname: Staedler fullname: Staedler, Thorsten organization: Institute of Materials Engineering, University of Siegen – sequence: 5 givenname: Xin surname: Jiang fullname: Jiang, Xin organization: Institute of Materials Engineering, University of Siegen |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/23939624$$D View this record in MEDLINE/PubMed |
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| CitedBy_id | crossref_primary_10_1039_D2CP03250C crossref_primary_10_1021_acsami_5b09794 crossref_primary_10_1007_s10854_020_04346_y crossref_primary_10_1016_j_matdes_2017_05_008 crossref_primary_10_1038_srep17251 crossref_primary_10_1002_adfm_202401949 crossref_primary_10_1016_j_surfcoat_2016_04_070 crossref_primary_10_1021_acsami_5b02024 crossref_primary_10_1016_j_carbon_2015_09_015 crossref_primary_10_1016_j_apsusc_2024_160844 crossref_primary_10_1039_D2CS00931E crossref_primary_10_1116_6_0001889 |
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| Title | When epitaxy meets plasma: a path to ordered nanosheets arrays |
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