Induction heating-assisted repeated growth and electrochemical transfer of graphene on millimeter-thick metal substrates

• Published in: Diamond and related materials Vol. 47; pp. 46 - 52
• Main Authors: Seifert, Max, Drieschner, Simon, Blaschke, Benno M., Hess, Lucas H., Garrido, Jose A.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.08.2014; Elsevier
• Subjects: Bubbling transfer; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cooling; Cross-disciplinary physics: materials science; rheology; CVD growth; Density; Doping; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Graphene; Heating; Induction heating; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Ramps; Reactors; Silicon substrates; Specific materials; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of film growth; Thin film structure and morphology; Bubbling transfer; Graphene; CVD growth; Induction heating; Grain size; Defect density; Field effect transistors; Industrial application; Doping; Crystal perfection; Heat treatments; Thin films; CVD; Monolayers; Growth mechanism; Pretreatment
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2014.05.007

Chemical vapor deposition in a hot wall reactor is the most common technique for the production of large area single layer graphene. However, growth in this type of reactors is time consuming and the results are limited by the surface quality of the widely used catalytic metal foils as growth substrates. In this work we demonstrate the use of millimeter-thick Cu and Pt substrates for graphene growth via inductive magnetic heating, which allows for fast temperature ramps during heat up and cooling. Based on a detailed growth study, a two-step growth process resulting in continuous monolayer graphene films of high crystal quality with grain size of larger than 90μm is established. An electrochemical transfer process is used to separate the graphene film from the metallic substrate, yielding excellent results in terms of defect density, doping and residual contamination. Back-gated graphene field-effect transistors fabricated on Si/SiO2 structures exhibit a high reproducibility with a peak mobility higher than 4000cm2/Vs. The combination of the highly time efficient graphene growth and electrochemical transfer together with the reusability of the growth substrates and the possibility of applying novel surface pretreatments pave the way for the use of high quality substrates in industrial applications. [Display omitted]