Impact of low-frequency noise variability on statistical parameter extraction in ultra-scaled CMOS devices

• Published in: Electronics letters Vol. 50; no. 19; pp. 1393 - 1395
• Main Authors: Ioannidis, E.G, Theodorou, C.G, Haendler, S, Dimitriadis, C.A, Ghibaudo, G
• Format: Journal Article
• Language: English
• Published: Stevenage The Institution of Engineering and Technology 11.09.2014; John Wiley & Sons, Inc; IET
• Subjects: circuit simulation; CMOS; CMOS integrated circuits; Computer simulation; Devices; Dispersions; Engineering Sciences; LFN characterisation issues; linear data; log noise data; log normal distribution; log normal statistical distribution; low‐frequency noise variability; Mathematical analysis; mean values; median values; Micro and nanotechnologies; Microelectronics; Monte Carlo methods; Monte Carlo variability circuit simulation; Noise; noise level dispersion; Noise levels; Semiconductor technology; Statistical distributions; statistical parameter extraction; ultra‐scaled CMOS devices; log normal distribution; noise level dispersion; circuit simulation; ultra-scaled CMOS devices; median values; low-frequency noise variability; linear data; mean values; statistical parameter extraction; Monte Carlo methods; log noise data; log normal statistical distribution; CMOS integrated circuits; Monte Carlo variability circuit simulation; LFN characterisation issues
• ISSN: 0013-5194; 1350-911X; 1350-911X
• DOI: 10.1049/el.2014.1837

The impact on the extracted low-frequency noise (LFN) parameter values due to LFN variability in CMOS devices is investigated. First, it is demonstrated that the noise level dispersion follows a log normal statistical distribution. Then, based on this feature, it is explained why the mean values from the linear data are different from the mean values (or median values) calculated from the log noise data. Finally, the consequence of this finding in terms of LFN characterisation issues and Monte Carlo LFN variability circuit simulation is discussed.