C-doped GaAsSb base HBT without hydrogen passivation grown by MOVPE

• Published in: Journal of crystal growth Vol. 272; no. 1; pp. 700 - 705
• Main Authors: Oda, Yasuhiro, Watanabe, Noriyuki, Uchida, Masahiro, Kurishima, Kenji, Kobayashi, Takashi
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.2004; Elsevier
• Subjects: A1. Doping; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Gallium compounds; B2. Semiconducting III–V materials; B2. Semiconducting ternary compounds; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities: doping, implantation, distribution, concentration, etc; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Passivation; Physics; Surface treatments; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Vapor phase epitaxy; growth from vapor phase; B1. Antimonides; B2. Semiconducting III–V materials; 73.61.Ey; III–V semiconductors; A1. Doping; A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; B2. Semiconducting ternary compounds; Bipolar transistors; Inorganic compounds; Gallium antimonides; Doping; Controlled atmospheres; VPE; Crystal growth from vapors; B2. Semiconducting III-V materials; Thin films; Arsenic Antimonides; IV characteristic; Current density; Passivation; III-V semiconductors Al. Doping; Temperature dependence; Annealing; Ternary compounds; Experimental study; Carbon additions; MOVPE method; Heterojunctions; Performance; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.08.087

Hydrogen passivation of C-doped GaAsSb during both metal-organic vapor phase epitaxy growth and annealing under hydride atmosphere was investigated in detail. It is well known that C accepters are easily passivated by hydrogen in III-V materials. We have found that hardly any hydrogen atoms are incorporated into C-doped GaAsSb if the annealing is performed under a hydride atmosphere. We have also found that AsH 3 exposure yields a lower rate of hydrogen passivation of the C-doped GaAsSb than during C-doped GaAsSb growth. These results are very advantageous for fabricating C-doped GaAsSb base heterojunction bipolar transistors (HBTs) without hydrogen passivation. In fact, we have successfully fabricated an InP/GaAsSb/InP D-HBT whose hydrogen concentration in the base ([C]: 8×10 19 cm −3, thickness: 20 nm) was under the detection limit of our SIMS measurement equipment. We demonstrate a relatively high-performance HBT ( β∼40, f T∼300 GHz, f max∼200 GHz, and BV CEO∼6 V) without any dehydrogenation process.