Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs

• Published in: Journal of crystal growth Vol. 261; no. 4; pp. 466 - 470
• Main Authors: Hsu, Y.P, Chang, S.J, Su, Y.K, Sheu, J.K, Lee, C.T, Wen, T.C, Wu, L.W, Kuo, C.H, Chang, C.S, Shei, S.C
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.2004; Elsevier
• Subjects: A1. Dislocation; A2. Lateral growth; A3. Multi quantum wells; Applied sciences; B1. InGaN/GaN; B1. Pattern sapphire; B3. Light emitting diodes; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Light-emitting devices; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optoelectronic devices; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; 71.55.Eq; B3. Light emitting diodes; 73.21.−b; A1. Dislocation; B1. Pattern sapphire; A3. Multi quantum wells; B1. InGaN/GaN; 71.55.−i; 73.21.Fg; A2. Lateral growth; Ternary compound; Binary compound; Cross section; 73.21.-b; Crystal growth from vapors; Gallium nitride; Inorganic compound; Dislocation density; Indium nitride; 73.21.Fg A1. Dislocation; Scanning electron microscopy; Patterning; 71.55.-i; Multiple quantum well; Epitaxial film; Experimental study; Chemical vapor deposition; MOCVD; Light emitting diode; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2003.09.046

GaN epitaxial layers and InGaN/GaN multiquantum well blue light emitting diodes (LEDs) were prepared on both patterned sapphire substrates (PSS) and conventional sapphire substrates. From scanning electron microscopy micrographs of GaN epitaxial layers on PSS, it was found that lateral growth indeed occurred and the lateral to vertical growth rate ratio was around 2. It was also found that we could enhance the LED output power by using lateral epitaxial patterned sapphire. Such an enhancement could be attributed to the reduced dislocation density in the lateral growth regions of the epitaxial layers.