Design considerations for high-current photodetectors
This paper outlines the design considerations for gigahertz-bandwidth, high-current p-i-n photodiodes utilizing InGaAs absorbers. The factors being investigated are photodetector intrinsic region length, intrinsic region doping density, temperature effects, illumination spot size, illumination wavel...
Saved in:
Published in | Journal of lightwave technology Vol. 17; no. 8; pp. 1443 - 1454 |
---|---|
Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.08.1999
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | This paper outlines the design considerations for gigahertz-bandwidth, high-current p-i-n photodiodes utilizing InGaAs absorbers. The factors being investigated are photodetector intrinsic region length, intrinsic region doping density, temperature effects, illumination spot size, illumination wavelength, frequency, and illumination direction. Space-charge calculations are used to determine optimal device geometry and conditions which maximize saturation photocurrent. A thermal model is developed to study the effects of temperature on high-current photodetector performance. The thermal and space-charge model results are combined to emphasize the importance of thin intrinsic region lengths to obtain high current. Finally, a comparison between surface-illuminated p-i-n structures and waveguide structures is made to differentiate between the problems associated with achieving high current in each structure and to outline techniques to achieve maximum performance. |
---|---|
Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 ObjectType-Article-2 ObjectType-Feature-1 |
ISSN: | 0733-8724 1558-2213 |
DOI: | 10.1109/50.779167 |