Preparation, morphology, and ultra-low dielectric constants of benzoxazine-based polymers/polyhedral oligomeric silsesquioxane (POSS) nanocomposites

• Published in: Polymer (Guilford) Vol. 51; no. 23; pp. 5567 - 5575
• Main Authors: Tseng, Min-Chi, Liu, Ying-Ling
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 29.10.2010; Elsevier
• Subjects: Applied sciences; Benzoxazine; Benzoxazines; Copolymerization; Dielectric constant; Dielectric properties; Exact sciences and technology; Inorganic and organomineral polymers; Lamellar structure; Nanocomposites; Orientation; Physicochemistry of polymers; Polyhedral oligomeric silsesquioxane; Polymers; Preparation; Benzoxazine; Nanocomposites; Dielectric properties; Property composition relationship; Silsesquioxane polymer; Cyclopolymerization; Furan derivatives; Diels Alder addition; Nanostructure; Silsesquioxane copolymer; Experimental study; Crosslinked copolymer; Lamellar structure; Cyclopolymer; Cyclic ether polymer; Polyhedral molecule; Morphology; Preparation; Prepolymer; Permittivity; Microheterogeneity
• ISSN: 0032-3861; 1873-2291
• DOI: 10.1016/j.polymer.2010.09.040

Nanocomposites of benzoxazine-based polymers/polyhedral oligomeric silsesquioxane (POSS) have been prepared through copolymerization of furan-containing benzoxazine compounds and methylmethacrylate-POSS (MMA-POSS). Nanocomposites having MMA-POSS fractions of 0–70 wt% (POSS fractions of 0–28 wt%) are obtained. The high contents of MMA-POSS of the nanocomposites result in a reduction of their dielectric constants to 2.3. Moreover, some nanocomposites display POSS orientation into lamellar structures in nanometer sizes. The POSS orientation further reduces the dielectric constants of the nanocomposites to about 1.9. Hence, the prepared nanocomposites could be used as ultra-low-k materials for advanced microelectronics. [Display omitted]