Phase-Transition Devices Based on Organic Mott Insulators

• Published in: Bulletin of the Chemical Society of Japan Vol. 94; no. 10; pp. 2505 - 2539
• Main Author: Yamamoto, Hiroshi M
• Format: Journal Article
• Language: English
• Published: Tokyo The Chemical Society of Japan 15.10.2021; Chemical Society of Japan
• Series: The Chemical Society of Japan Award for Creative Work for 2018
• Subjects: Conductors; Crystal surfaces; Electric fields; Insulators; Kinetic energy; Masterpiece Materials with Functional Excellence; Phase diagrams; Phase transitions; Pressure effects; Single crystals; Superconductivity; Thin films; Transistors; Organic mott insulator; Field effect transistor; Superconducting device
• ISSN: 0009-2673; 1348-0634
• DOI: 10.1246/bcsj.20210256

Organic Mott-insulators are abundant among molecular conductors and are relevant to many emerging properties such as insulator-to-metal transitions, superconductivity, multiferroics, spin-liquids, and so on. In this review, phase transitions controlled by electric-field-induced carrier doping, strain-induced pressure effect, and light-induced carrier generation observed at a thin film single crystal surface of organic Mott-insulators are described. The control of electronic phases by external stimuli can give rise to a possibility of future application. At the same time, thermodynamic parameters can be tuned by those input signals to determine the system phase diagram, providing basic knowledge indispensable for Mott physics. Therefore, devices made of organic Mott-insulators can contribute to obtaining much information about Mott-transition and associated superconductivity, as well as the feasibility of application in future electronics.