Pressure-induced structural phase transformations in silicon nanowires

High-pressure structural behavior of silicon nanowires is investigated up to approximately 22 GPa using angle dispersive X-ray diffraction measurements. Silicon nanowires transform from the cubic to the beta-tin phase at 7.5-10.5 GPa, to the Imma phase at approximately 14 GPa, and to the primitive h...

Full description

Saved in:
Bibliographic Details
Published inJournal of nanoscience and nanotechnology Vol. 5; no. 5; p. 729
Main Authors Poswal, H K, Garg, Nandini, Sharma, Surinder M, Busetto, E, Sikka, S K, Gundiah, Gautam, Deepak, F L, Rao, C N R
Format Journal Article
LanguageEnglish
Published United States 01.05.2005
Subjects
Crystallization - methods
Crystallography
Electric Wiring
Materials Testing
Molecular Conformation
Nanotechnology - methods
Nanotubes - chemistry
Nanotubes - ultrastructure
Phase Transition
Pressure
Silicon - analysis
Silicon - chemistry
Online AccessGet more information

Cover

More Information
Summary:High-pressure structural behavior of silicon nanowires is investigated up to approximately 22 GPa using angle dispersive X-ray diffraction measurements. Silicon nanowires transform from the cubic to the beta-tin phase at 7.5-10.5 GPa, to the Imma phase at approximately 14 GPa, and to the primitive hexagonal structure at approximately 16.2 GPa. On complete release of pressure, it transforms to the metastable R8 phase. The observed sequence of phase transitions is the same as that of bulk silicon. Though the X-ray diffraction experiments do not reveal any size effect, the pressure dependence of Raman modes shows that the behavior of nanowires is in between that of the bulk crystal and porous Si.
ISSN:1533-4880
DOI:10.1166/jnn.2005.109